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What does D2 stand for?

D2 stands for deposited H2

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The plasma TEOS films also show large threshold shifts as deposited when high power densities are employed. The thermal TEOS films are fairly well-behaved as deposited but again show large shifts when annealed. The deposition conditions for the thermal films (60 Torr total pressure) are likely to lead to significant carbon incorporation in the films. Although it is unclear what amount of TEOS (as opposed to carrier gas) is being delivered to the chamber, the high deposition rates argue for relatively low O2:TEOS ratios in the plasma films, again suggesting significant carbon incorporation according to the work of Carlson et.
From 1961 to 1994, more than 3. 5 million people were forcibly removed from their homes and deposited.
Intense and dangerous volcanic activity continued at Merapi with hot lava avalanches, near-continuous pyroclastic flows, and an eruption on 10 February that deposited ash on many cities out to 60 km E of the volcano. During 30 January to 5 February, continuous hot lava avalanches and pyroclastic flows traveled down the SW flank of the volcano along the Sat, Senowo, and Bebeng rivers to a maximum runout distance of ~4.
The bonds between the crewmembers of the USS Arizona have lasted far beyond the ship’s loss on December 7, 1941. Since 1982, the U. S. Navy has allowed survivors of the USS Arizona to be interred in the ship’s wreckage upon their deaths. Following a full military funeral at the Arizona memorial, the cremated remains are placed in an urn and then deposited.
Spirochetes, such as those found in Lyme disease, may be one of the causes of Alzheimer's disease and may also be the source of beta amyloid deposited.
One might know that the bank will be open on Saturday after confirming that the bank has Saturday hours, even if one has not checked whether the bank has changed its hours in the past two weeks, as long as no great harm will befall one if it turns out one is wrong. But if financial ruin will befall one were a check not deposited.
Among various gate dielectric materials for back-gated FETs, ferroelectric materials have been widely utilized due to their high dielectric constant and their switchable remnant polarization. A back-gated ferroelectric FET with Metal-Semiconductor-Insulator-Metal (MSIM) structure is reported, in which an Al-doped zinc oxide (ZAO) channel layer with optimized dopant concentration of 1% was applied as a natural n-type semiconductor in order to increase the carrier density and reduce the channel resistance of the channel layer and thus to guarantee large enough load capacity of the transistor. Different ferroelectric thin films were considered for the MSIM device, such as lead zirconate titanate (PZT), bismuth ferrite without (BFO) and with the dopants of 5% lanthanum (BLFO) or 5% manganese (BFMO). The electron depletion and accumulation switching operation was conducted due to the modulation of the ferroelectric layer on ZAO channel resistance caused by the switchable remnant polarization of the ferroelectric layer, which could be proved by the measurement of capacitance-voltage characteristics and would result in different stable storage states with different channel conductivity. In this work, the ferroelectric thin films were directly deposited.