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What does SAC stand for?

SAC stands for Self Aligned Contacts

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Samples in periodicals archive:

CMOS Technology with Self-Aligned Contacts and Self-Aligned Silicide on ResearchGate, the professional network for scientists.
A 22nm High Performance and Low-Power CMOS Technology Featuring Fully-Depleted Tri-Gate Transistors, Self-Aligned Contacts and High Density MIM Capacitors
A method for simultaneous formation of a self-aligned contact of a core region and a local interconnect of a peripheral region of an integrated circuit includes...
self-aligned contacts, severe layout dependent effects, and more DFM. In addition to these typical challenges; challenges in manufacturing FinFET as summarized
United States Patent 4,221,045 September 9, 1980 Self-Aligned Contacts In An Ion Implanted VLSI Circuit Gordon C. Godejahn, Jr. Filed June 6, 1978
high density mosfet array with self-aligned contacts delimited by nitride-capped trench gate stacks and method
This process enables blanket deposition techniques such as MBE to perform regrowth of self-aligned contacts on the nanometer scale. Acknowledgements.
CMOS Technology with Self-Aligned Contacts and Self-Aligned; The use of self-aligned contacts and self-aligned silicide allows to reduce the circuit surface of...
Height-selective etching for regrowth of self-aligned contacts using MBE: Authors: Burek, G. J.; Wistey, M. A.; Singisetti, U...
Low parasitic elements and self aligned contacts technology for high frequency bipolar integrated circuits. Added by. Marian Badila. ieeexplore.ieee.org; Views.
In general, self-aligned contacts are formed by utilizing an oversized contact mask, thus eliminating the difficulties of mask alignment.
Silicon Carbide and Related Materials 2014: 4H-SiC VJFETs with Self-Aligned Contacts
A process is provided for fabricating self-aligned contacts to the surface of an integrated circuit. The process includes the steps of depositing a layer of silicon...
Semiconductor device having self-aligned contacts US 6087710 A. Abstract.
Abstract: A method for fabricating a thin-silicon-on-insulator transistor with borderless self-aligned contacts is disclosed. A gate stack is formed on a silicon...
Self aligned contacts Abstract. A process of forming a self aligned contact on a surface of a wafer having one or more gate structures and a contact region adjacent...
Abstract Self-aligned contacts (SAC) have been successfully scaled down to 0.2 tm, for high speed SRAM fabrication at the 64Mb density level. All factors affecting...
Self-aligned contacts for transistors and methods for fabricating the contacts are described. An etch resistant material is patterned to create an opening that...
We propose an original architecture adapted to the 10nm transistor node (pitch 64nm) for FDSOI technology. This structure features self-aligned contacts and a gate...
Self-aligned contacts in silicon by nitrogen implantation. Added by. Edward Maby. Views. URL. link.aip.org. Edward Maby hasn't uploaded this paper.
Novel approaches for forming self-aligned contacts in III-V MOSFETs in a manner similar to the salicidation process in Silicon Complementary Metal-Oxide...
A comparison between arsenric and phosphorus implanted self-aligned contacts is presented; by using 2D process simulations the high leakage defectivity measured on...
This structure features self-aligned contacts and a gate capping dielectric layer preventing any short in case of lithographic misalignment of contacts. 2D...
Used in the formation of self-aligned contacts and other advanced CMP process applications; High silicon nitride removal rates with high selectivity to oxide;
Method of forming self-aligned contacts for a semiconductor device: Peter Baars, Dresden (DE); Andy Wei, Dresden (DE); Erik Geiss, Saratoga Springs, NY (US); and...
Directed self-assembly (DSA); self-aligned contacts and high density MIM capacitors, Proc. IEEE VLSI Symposium (Symp. VLSI Tech. Dig.)...
Self-aligned contacts are formed to regions between closely spaced features by a method which uses differential etch rates between first and second dielectrics...
Lam Research : Patent Issued for Method for Forming Self-Aligned Contacts/Vias with High Corner Selectivity (USPTO 9105700)
Careful transistor design using a high K dielectric T-gate and self-aligned contacts, further contributed to the record-breaking f max. Attachment Size;
Abstract. A mechanical polishing planarization (MPP) process is developed with an endpoint detection method. MPP makes it possible to form self-aligned contacts on...
Silicides for self-aligned contacts. Diffusion barriers. Schottky barriers. Multilayered ohmic contact. Formation of shallow junctions and their impact on contact...
Daniel M. Dobkin Films for Self-Aligned Contacts: enigmatics@batnet.com
A process of forming a self aligned contact on a surface of a wafer having one or more gate structures and a contact region adjacent the gate structures. The gate...
Title: Self aligned contact. Abstract: A semiconductor device comprises one or more self aligned contacts. The device may include one or more gate structures adjacent...