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This configuration, originally used by Czernuszka et al.  to image dislocations in Si and Ni3Ga, has been adapted by Wilkinson’s group [16, 22, 23] and Picard et al. [24-26] to examine dislocations in SiGe/Si epitaxial layers , and GaN and SiC thin films [23-26]. BSE-based methods make use of electron channeling patterns to optimize the diffraction contrast of the crystal defect image. These patterns can be obtained after running the microscope at low magnification (so-called electron channeling patterns, ECPs) [17, 18, 20] or after rocking the incoming beam on the material surface by a deflection focusing technique (so-called selected-area channeling patterns.