Printer friendly
"AcronymAttic.com

What does RMBE stand for?

RMBE stands for Reactive Molecular Beam Epitaxy

Advertisement:

This definition appears very rarely

See other definitions of RMBE

Samples in periodicals archive:

Publication » Reactive molecular beam epitaxy; [Show abstract] [Hide abstract] ABSTRACT: The broad spectrum of electronic and optical properties exhibited by...
Keywords = reactive molecular beam epitaxy Matches by word: REACTIVE (1208), MOLECULAR (7018), BEAM...
Homoepitaxial Growth of GaN Layers by Reactive Molecular-Beam Epitaxy on Bulk GaN Single Crystals Prepared by Pressure-Controlled Solution Growth
TiO2 films were grown using a reactive molecular beam epitaxy system equipped with high-temperature effusion cells as sources for Ti and an ozone distillation s
Abstract. The growth of high quality multicomponent oxide thin films by reactive molecular beam epitaxy (MBE) requires precise composition control.
Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy; reactive molecular beam epitaxy; electrical characterizations;
Morphology of GaN Surfaces and GaN/(Al,Ga)N Interfaces Grown on 6H-SiC(0001) by Reactive Molecular Beam Epitaxy
Epitaxial La 0.7 Sr 0.3 MnO 3 thin films grown on SrTiO 3 buffered silicon substrates by reactive molecular-beam epitaxy
Jc Jiang, Xq Pan, W Tian, Cd Theis, and Dg Schlom (1999) Abrupt Pbtio3/Srtio3 Superlattices Grown By Reactive Molecular Beam Epitaxy
Reactive Molecular Beam Epitaxy. Papers by Keyword: Paper Title Page High Speed, Low Noise Ultraviolet Photodetectors Based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n...
Transport Properties of Ultra-Thin VO2 Films on (001) TiO2 Grown by Reactive Molecular-Beam Epitaxy
On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy
Title: TiO2 as an electrostatic template for epitaxial growth of EuO on MgO(001) by reactive molecular beam epitaxy
Read "Reactive molecular beam epitaxy of aluminium nitride" on DeepDyve - Instant access to the journals you need!
Epitaxial thin films of BiMnO 3 have been grown by a reactive molecular-beam epitaxy.
Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy 1999 MRS Fall Meeting. Article author query; fang zq [Google Scholar]
Read "Surface roughness of nitrided (0001) Al 2 O 3 and AlN epilayers grown on (0001) Al 2 O 3 by reactive molecular beam epitaxy" on DeepDyve - Instant access to the...
Deep level defects in n; Deep-level transient spectroscopy has been used to characterize electronic defects inn-type GaN grown by reactive molecular-beam epitaxy.
Abstract. Deep-level transient spectroscopy has been used to characterize electronic defects in n-type GaN grown by reactive molecular-beam epitaxy.
Transport properties of ultra-thin VO 2 films on (001) TiO 2 grown by reactive molecular-beam epitaxy Hanjong Paik,1 Jarrett A. Moyer,2,3 Timothy Spila,3 Joshua W...
Electron and Hole Traps in GaN p-i-n Photodetectors Grown by Reactive Molecular Beam Epitaxy. Z-Q. Fang David C. Look, Wright State University - Main Campus
Abstract: J13.00010 : TiO2 as an electrostatic template for epitaxial growth of EuO on MgO(001) by reactive molecular beam epitaxy
Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics
Abstract: PbTiO3/SrTiO3PbTiO3/SrTiO3 superlattices were grown on (001) SrTiO3SrTiO3 substrates by reactive molecular beam epitaxy (MBE). Sharp superlattice...
TiO2 films were grown using a reactive molecular beam epitaxy system equipped with high-temperature effusion cell for Ti and ozone. The growth mode, characterized in...
Home > Publications database > Transport properties of ultra-thin VO2 films on (001) TiO2 grown by reactive molecular-beam epitaxy
We have performed the homoepitaxial growth of GaN layers by reactive molecular-beam epitaxy (MBE) on both sides (Ga- and N-faces) of the bulk GaN single crystals...
Hildebrandt, Erwin Matti: Oxygen Engineered Hafnium Oxide Thin Films grown by Reactive Molecular Beam Epitaxy. TU Darmstadt, Darmstadt, Germany
Effects of Hydrogen on the Morphology and Electrical Properties of GaN grown by; and reactive molecular beam epitaxy (RMBE) using ammonia [2]) and those without
3 substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFeO
We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO2±x grown by reactive molecular beam epitaxy. The oxidation conditions...