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Metallorganic vapor phase epitaxy (MOVPE) growth of ZnSe 1-x Te x on (111) and (001) GaAs substrates
Using metallorganic vapor-phase epitaxy, thin films of gallium nitride activated by Eu3+ (GaN:Eu3+) have been deposited on sapphire substrates at atmospheric pressure.
Abstract. A model for the growth of gallium nitride in a vertical metallorganic vapor phase epitaxy (MOVPE) reactor is presented and compared to...
GaN Growth by Metallorganic Vapor Phase Epitaxy on ResearchGate, the professional network for scientists.