Printer friendly
"AcronymAttic.com

What does III stand for?

III stands for Implantation Induced Intermixing

Advertisement:

This definition appears very rarely

See other definitions of III

Other Resources: Acronym Finder has 24 verified definitions for III

Samples in periodicals archive:

Carrier relaxation process of V-grooved AlGaAs/GaAs quantum wire modified by selective implantation-induced intermixing (Conference Proceedings)
References. K. Zeaiter, et al., "Quasi-phase-matched second-harmonic generation in a GaAs/AlAs superlattice waveguide by ion-implantation-induced intermixing," Opt...
the extent of the implantation induced intermixing. For a sample that had half of the surface shielded during im-plantation...
Analysis of AlGaAs/GaAs Multiple Quantum Well Dual Waveguides Defined by Ion Implantation Induced Intermixing 1997 MRS Fall Meeting. Article author query;
Band gap tuning of InAs/InP quantum sticks using low-energy ion-implantation-induced intermixing B. Salem,a V. Aimez, and D. Morris Centre de Recherche en...
Analysis of strain-induced polarisation-insensitive integrated waveguides fabricated using ion-implantation-induced intermixing
Quasi-phase-matched second-harmonic generation in a GaAs/AlAs superlattice waveguide by ion-implantation-induced intermixing
View R. M. Gwilliam's; First-order quasiphase matched second harmonic generation in GaAs/AlAs superlattice waveguides by use of ion-implantation induced intermixing.
Proton-irradiation-induced intermixing of InGaAs; Proton implantation-induced intermixing of In As In; Proton-irradiation-induced intermixing of InGaAs...
(1D-EHP) are studied in a wide range of wire widths. The wires are realized by implantation induced intermixing of GaAs/AlGaAs quantum wells.
We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create...
Quasi-phase-matched second-harmonic generation in a GaAs AlAs superlattice waveguide by ion-implantation-induced intermixing
GaAs/AlGaAs quantum dots with diameter down to 70 nm have been realized by implantation induced intermixing.
Using Arsenic Implantation Induced Intermixing[ J]. J. Appl. Phys., 1998,83 : 4526-4530 [2] Djie H S, Arokiaraj J, Mei T, et al. Large Blueshift in InGaAsOInGaAsP...
Low Energy Ion Implantation Induced Intermixing in Photonic Devices: Defect Profiling and Evolution F. Schiettekatte1, V. Aimez2, M. Chicoine1, S. Chevobbe2, J.F...
Ion implantation induced intermixing of GaAs/AlGaAs and InGaAs/AlGaAs quantum wells was studied using low temperature photoluminescence. Large energy shifts were...
Proceedings Paper High-quality photonic device fabrication using low-energy-ion-implantation-induced intermixing
Low-loss monolithic extended cavity laser by low-energy ion-implantation induced intermixing: Wang,Y. et al. Electronics Letters(2006),42(12):699
(IFVD), ion implantation induced intermixing and selective area epitaxy (SAE), that can be used to control the in-plane band gap energy of QDs...
We now present results demonstrating multi-color lasing from the QD lasers fabricated using ion implantation induced intermixing and compare their characteristics...
References from the article Investigation of ion implantation induced intermixing in InP based quaternary quantum wells
Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixing
High-quality photonic device fabrication using low-energy-ion-implantation-induced intermixing
Proton implantation-induced intermixing of In As In P quantum dots S. Barik, H. H. Tan, and C. Jagadish Citation: Applied Physics Letters 88, 223101 (2006); doi: 10...
Ion implantation induced intermixing of GaAs/AIGaAs and InGaAs/A1GaAs quantum wells was studied using low temperature photoluminescence. Large energy shifts were...
The different tendency of the sensitivity of proton implantation-induced intermixing from that of the arsenic indicates the type of defects induced by the proton...
Read "Proton implantation-induced intermixing effects on AlGaAs/GaAs single QW structures" on DeepDyve - Instant access to the journals you need!
plication of implantation-induced intermixing on the devices. Acknowledgements This work was supported by a grant from the State
Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and InAlGaAs/InGaAs/InP quantum wells
Optical properties of GaAsIAlGaAs quantum dots realized by implantation induced intermixing. Cached. Download Links [hal.archives-ouvertes.fr] Save to List;
Ga implantation-induced intermixing is examined in terms of dose dependence and interdiffusion characteristics under conditions of dual implantation of As and Ga.